| 摘要 |
PURPOSE: A method for manufacturing a fine pattern of a semiconductor device is provided to be capable of improving the degree of integration and increasing process margin by exposing a photoresist layer using DUV(Deep Ultra Violet). CONSTITUTION: A positive photoresist layer(2) is formed on an etch object layer(1). A photoresist pattern having a predetermined duty ratio, is formed by selectively etching the photoresist layer using an exposure mask(5) for partially exposing the etch object layer. At this time, the width of a line formed at the photoresist pattern is larger than that of a space. A resin layer is then formed on the exposed portion of the etch object layer. After annealing the resultant structure, a resin pattern is formed by removing the photoresist pattern. Then, an etch object pattern is formed by selectively etching the etch object layer using the resin pattern as an etching mask. Preferably, the photoresist layer is exposed by using one selected from a group consisting of DUV, E-beam, or X-ray.
|
