Stacked layer structure, light-emitting device, lamp, and light source unit

摘要

A stacked layer structure including a single crystal substrate; an amorphous or polycrystalline buffer layer formed from a boron-containing Group III-V compound semiconductor. The buffer layer is provided on the substrate; a cladding layer formed from a boron-containing Group III-V compound semiconductor is provided on the buffer layer; and a light-emitting layer having a quantum well structure including a barrier layer formed from a boron-containing Group III-V compound semiconductor and a well layer formed from a Group III nitride semiconductor is provided on the cladding layer. The barrier layer is formed from a boron-containing Group III-V compound semiconductor having the same lattice constant as a boron-containing Group III-V compound semiconductor constituting the cladding layer.