| 摘要 |
A semiconductor memory device is provided including plural memory cells and capable of a dual port access. In the memory device the memory cell is composed with two driver transistors 1, two load transistors 2, and two access transistors 3, and in the data read, the word line 11 makes the access transistors 3 conductive to read out data held in the driver transistors to a pair of the bit lines, and in the data write, the load transistor control line makes the load transistors conductive to write data into the driver transistors from a pair of the memory cell VCC lines.
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