| 摘要 |
Disclosed is a semiconductor device, comprising a semiconductor substrate, an insulating film and a gate electrode formed on the semiconductor substrate, source-drain regions formed in the semiconductor substrate, and a metal oxide layer formed selectively on the gate electrode. The gate electrode is formed of a first metal, and the metal oxide layer contains a second metal having a reduction amount of a Gibbs standard free energy in forming an oxide that is larger than that of the first metal.
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