MICROELECTROMECHANICAL SYSTEM DEVICES INTEGRATED WITH SEMICONDUCTOR STRUCTURES

摘要

Microelectromechanical (MEMS) devices (620) are integrated with high frequency devices (622) on a monolithic substrate (618) or wafer. High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates (619) such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. MEMS devices (620), such as a switch, a variable capacitance device or a temperature control structure, are formed in the base monocrystalline substrate. High frequency devices, such as transistors or diodes, are formed in the overlaying layer of monocrystalline materials.