Surface emitting laser device

摘要

There is provided a surface emitting laser device of fundamental lateral mode oscillation that suppresses a resistor increase and that is favorable in reliability. A GaAs layer 16 having such a thickness as to exhibit a high reflection factor with respect to oscillation wavelength is formed on an upper DBR mirror. In addition, a groove having such a depth that the GaAs layer located directly under it has such a thickness as to exhibit a low reflection factor with respect to oscillation wavelength is formed on the GaAs layer in such a position as to stride an extension line of a boundary between an Al oxide layer and an AlAs layer. As a result, laser oscillation can be conducted only in a post region surrounded by the groove.