发明名称 |
Thin film magnetic memory device including memory cells having a magnetic tunnel junction |
摘要 |
In a tunneling magneto-resistance element, first and second free magnetic layers have a magnetization direction according to storage data. The first and second magnetic layers are arranged with an intermediate layer interposed therebetween. The intermediate layer is formed from a non-magnetic conductor. In data write operation, a data write current having a direction according to a write data level is supplied to the intermediate layer. A magnetic field generated by the current flowing through the intermediate layer magnetizes the first and second free magnetic layers with a looped manner.
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申请公布号 |
US2003026125(A1) |
申请公布日期 |
2003.02.06 |
申请号 |
US20020175846 |
申请日期 |
2002.06.21 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
HIDAKA HIDETO |
分类号 |
G11C11/14;G11C7/18;G11C11/00;G11C11/15;G11C11/16;H01L21/8246;H01L27/105;H01L43/08;(IPC1-7):G11C11/00 |
主分类号 |
G11C11/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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