INTEGRATED TUNEABLE CAPACITOR

摘要

Disclosed is an integrated tuneable capacitor provided with a semiconductor area (2) which is preferably N-doped and formed in a semiconductor body (1); an insulating thick oxide area (4) whose surface borders on the main side (3) of the semiconductor body (2); and a thin oxide area (5) which is also adjacent to the main side (3) and which is arranged on the above the semiconductor area (2) in addition to having a lower layer thickness than the thick oxide area (4). A gate electrode (6) is placed on the thin oxide area (5) and connection areas (7) are provided in the semiconductor area (2). The inventive capacitor has a greater tuning range in comparison with transistor varactors. The integrated tuneable capacitor can be used, for instance, in LC oscillators in integrated VCOs.