PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE

摘要

An efficient production method for a semiconductor device which requires fewer production steps. A production method for a semiconductor device having a multi−layer interconnection structure using a dual damascene method, wherein a second interlayer insulation film is removed substantially using a first hard mask as a mask to form an opening, an etching stopper film is removed, and then a first interlayer insulation film is removed to form a via hole in the first interlayer insulation film.