REDUNDANCY CIRCUIT AND METHOD FOR FLASH MEMORY DEVICES

摘要

A method and circuit are disclosed for replacing defective columns of flash memory cells in a flash memory device. The circuit includes a plurality of sets of storage elements, each set of storage elements being capable of identifying at least one column of memory cells in any block of memory cells as being defective. The circuit further includes control circuitry for replacing an addressed column of memory cells with a redundant column of memory cells upon an affirmative determination that a set of storage elements identifies the addressed column of memory cells as being defective.