MEMORY CELL COMPRISING A TRENCH AND METHOD FOR PRODUCTION THEREOF

摘要

The invention relates to a memory cell (1), comprising a trench (3), in which a trench capacitor is arranged. Furthermore a vertical transistor is formed in the trench (3), above the trench capacitor. A barrier layer (60) is provided for the electrical connection of the conducting trench filling (10) to a lower doped region (18) of the vertical transistor. The barrier layer (60) is a diffusion barrier for doped material or impurities contained in the conducting trench filling.