发明名称 |
Ferroelectric memory and method for reading the same |
摘要 |
A ferroelectric memory device and method for reading such a device utilize capacitive coupling between a bit line and sense amplifier. The gain depends on a capacitance ratio rather than the absolute value of a capacitor. Ratiometric gain control reduces the gain variability of a sense amplifier, thereby allowing more accurate sensing. Attenuating the signal from an active bit line eliminates the need for high voltage devices in a sense amplifier arrangement.
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申请公布号 |
US2003026122(A1) |
申请公布日期 |
2003.02.06 |
申请号 |
US20010919575 |
申请日期 |
2001.07.30 |
申请人 |
NAIR RAJENDRAN;CHOW DAVID G. |
发明人 |
NAIR RAJENDRAN;CHOW DAVID G. |
分类号 |
G11C11/22;(IPC1-7):G11C11/22 |
主分类号 |
G11C11/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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