发明名称 Ferroelectric memory and method for reading the same
摘要 A ferroelectric memory device and method for reading such a device utilize capacitive coupling between a bit line and sense amplifier. The gain depends on a capacitance ratio rather than the absolute value of a capacitor. Ratiometric gain control reduces the gain variability of a sense amplifier, thereby allowing more accurate sensing. Attenuating the signal from an active bit line eliminates the need for high voltage devices in a sense amplifier arrangement.
申请公布号 US2003026122(A1) 申请公布日期 2003.02.06
申请号 US20010919575 申请日期 2001.07.30
申请人 NAIR RAJENDRAN;CHOW DAVID G. 发明人 NAIR RAJENDRAN;CHOW DAVID G.
分类号 G11C11/22;(IPC1-7):G11C11/22 主分类号 G11C11/22
代理机构 代理人
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