发明名称 |
Processes for making a barrier between a dielectric and a conductor and products produced therefrom |
摘要 |
The formation of a barrier layer over a high k dielectric layer and deposition of a conducting layer over the barrier layer prevents intermigration between the species of the high k dielectric layer and the conducting layer and prevents oxygen scavenging of the high k dielectric layer. One example of a capacitor stack device provided includes a high k dielectric layer of Ta2O5, a barrier layer of TaON or TiON formed at least in part by a remote plasma process, and a top electrode of TiN. The processes may be conducted at about 300 to 700° C. and are thus useful for low thermal budget applications. Also provided are MIM capacitor constructions and methods in which an insulator layer is formed by remote plasma oxidation of a bottom electrode.
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申请公布号 |
US2003025146(A1) |
申请公布日期 |
2003.02.06 |
申请号 |
US20010911947 |
申请日期 |
2001.07.23 |
申请人 |
NARWANKAR PRAVIN;BAKLI MOULOUD;RAJAGOPALAN RAVI;URDAHL RANDALL S.;SINENSKY ASHER;ATHREYA SHANKARRAM |
发明人 |
NARWANKAR PRAVIN;BAKLI MOULOUD;RAJAGOPALAN RAVI;URDAHL RANDALL S.;SINENSKY ASHER;ATHREYA SHANKARRAM |
分类号 |
H01L21/02;H01L21/314;H01L21/316;(IPC1-7):H01L21/824;H01L27/108 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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