发明名称 |
One-transistor memory cell configuration and method for its fabrication |
摘要 |
One-transistor memory cell arrangement and method for fabricating it In a method for fabricating a dynamic memory cell in a semiconductor substrate having a trench capacitor 1 and a selection transistor 2 and a semiconductor memory having such a memory cell, a dielectric insulator layer 17, 201 is formed between the selection transistor and the trench capacitor, a first electrode region 203 of the selection transistor essentially being arranged above a block-type inner electrode 102 of the trench capacitor and being connected to said electrode via a contact opening 213 in the dielectric insulator layer, said contact opening being provided with an electrically conductive filling layer 214.
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申请公布号 |
US2003025140(A1) |
申请公布日期 |
2003.02.06 |
申请号 |
US20020166813 |
申请日期 |
2002.06.11 |
申请人 |
KUSTERS KARL HEINZ;TEMMLER DIETMAR |
发明人 |
KUSTERS KARL HEINZ;TEMMLER DIETMAR |
分类号 |
H01L21/8242;H01L27/108;H01L27/12;(IPC1-7):H01L27/108 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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