| 发明名称 |
Methods of sputtering using krypton |
| 摘要 |
A method of sputtering a layer from a target having a plurality of recesses or openings includes using Krypton as a sputtering gas and is characterized in that the gas flow is less than 20 sccm and or the Krypton pressure is less than 1 militor.
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| 申请公布号 |
US2003024808(A1) |
申请公布日期 |
2003.02.06 |
| 申请号 |
US20020204247 |
申请日期 |
2002.08.21 |
| 申请人 |
DONOHUE HILKE;HARRIS MARK GRAEME MARTIN |
发明人 |
DONOHUE HILKE;HARRIS MARK GRAEME MARTIN |
| 分类号 |
C23C14/04;C23C14/35;H01L21/285;(IPC1-7):C23C14/34 |
主分类号 |
C23C14/04 |
| 代理机构 |
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