发明名称 |
ONE-STEP ETCH PROCESSES FOR DUAL DAMASCENE METALLIZATION |
摘要 |
A method for forming a dual damascene structure, employs the steps of forming a dielectric layer (14), patterning a first resist layer (16) on the dielectric layer to form a via pattern (26) and patterning a second resist layer (28) to form a line pattern (38) in communication with the via pattern formed on the first resist layer wherein the first resist layer includes exposed portions adjacent to the via pattern. The first resist layer, the second resist layer and the dielectric layer are etched such that the dielectric layer has a via (40) formed therein which gets deeper during the etching process. The dielectric layer has a trench (42) formed therein in communication with the via which gets deeper after the exposed portions of the first resist layer are consumed by the etching process. |
申请公布号 |
WO0229887(A3) |
申请公布日期 |
2003.02.06 |
申请号 |
WO2001US26998 |
申请日期 |
2001.08.30 |
申请人 |
INFINEON TECHNOLOGIES NORTH AMERICA CORP. |
发明人 |
LU, ZHIJIAN;NING, XIAN, J.;YIN, XIAOMING |
分类号 |
H01L21/768 |
主分类号 |
H01L21/768 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|