发明名称 Method and apparatus for using an excimer laser to pattern electrodeposited photoresist
摘要 A method for using an excimer laser to pattern electrodeposited photoresist on a sloped surface of a wafer substrate includes depositing a layer of photoresist on top of a substrate that includes a sloped surface and scanning an excimer laser beam over the layer of photoresist to expose the layer of photoresist in a desired pattern. The scanning step includes projecting the excimer laser beam in a small beam spot onto the substrate and scanning the small beam spot of the excimer layer beam relative to the substrate to define the pattern sequentially onto the substrate, including the sloped surface.
申请公布号 US2003027084(A1) 申请公布日期 2003.02.06
申请号 US20010917650 申请日期 2001.07.31
申请人 MITTELSTADT LAURIE S. 发明人 MITTELSTADT LAURIE S.
分类号 G03F7/20;G03F7/207;(IPC1-7):G03F7/20 主分类号 G03F7/20
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