发明名称 Photoresist and process for structuring such a photoresist
摘要 A negative photoresist for transferring a photomask to a semiconductor wafer includes a passivated component that is activated by an exposure radiation, the activated component being configured to interact with the uppermost layer of the semiconductor wafer at the interface, the interaction ensuring increased adhesion between the negative photoresist and the substrate. Alternatively, a positive photoresist for transferring a photomask to a semiconductor wafer includes a component that is passivated by an exposure radiation, the activated component being configured to interact with the uppermost layer of the semiconductor wafer at the interface, the interaction ensuring increased adhesion between the positive photoresist and the substrate.
申请公布号 US2003027060(A1) 申请公布日期 2003.02.06
申请号 US20020213411 申请日期 2002.08.05
申请人 LEDERER KAY 发明人 LEDERER KAY
分类号 G03F7/004;G03F7/085;G03F7/38;H01L21/027;H01L21/3205;H01L23/52;(IPC1-7):G03F9/00 主分类号 G03F7/004
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