发明名称 |
Thermal compensation method for forming semiconductor integrated circuit microelectronic fabrication |
摘要 |
Within a sequential and repetitive thermal oxidation and stripping method for forming a plurality of gate dielectric layers having a maximum numbered plurality of thicknesses upon a semiconductor substrate, there is provided a compensating thermal annealing when forming less than the maximum numbered plurality of thicknesses of the plurality of gate dielectric layers upon the semiconductor substrate. By employing the compensating thermal annealing, the semiconductor substrate is more readily manufacturable in conjunction with related microelectronic fabrications.
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申请公布号 |
US2003027391(A1) |
申请公布日期 |
2003.02.06 |
申请号 |
US20010920911 |
申请日期 |
2001.08.02 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
YU MO-CHIUN;CHEN SHIH-CHANG;YU CHEN-HUA |
分类号 |
H01L21/8234;(IPC1-7):H01L21/823 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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