| 摘要 |
<p>A method and apparatus for forming an in situ stabilized high concentration borophosphosilicate glass film on a semiconductor wafer or substrate. In an embodiment, the method stars by providing the substrate into a chamber. The method continues by providing a silicon course, an oxygen source, a boron source and a phosphorous source into the chamber to form a high concentration borosphosphosilicate glass layer on the substrate. The method further includes reflowing the thigh concentration borophosphosilicate glass layer formed on the substrate.</p> |
