High output power semiconductor laser diode

摘要

A semiconductor laser diode has a GaAs substrate and a resonant cavity formed on the GaAs substrate. The resonant cavity includes a QW structure having a GaInAsN well layer and a AlGaAs or GaInAsP barrier layers. Specific combination of the indium content and the nitrogen content in the well layer alone or in combination with the specific composition of the barrier layers provides a long-term operation at a higher output power.