摘要 |
<p>A non-volatile memory and a non-volatile memory data rewriting method capable of easily sensing an operation state at system down due to electric power failure or the like and reliably and rapidly returning to a normal storage state by a simple procedure. The non-volatile memory consists of storage units which are physical blocks, each having a data area (1) and a redundant area (2). The redundant area (2) includes a logical block address storage area (3) for storing an address of a corresponding logical block, a pre-use physical block address storage area (4) for storing an address of a physical block to be erased, and a status information storage area (6) for storing status information for discriminating the operation state of each stage generated when data rewriting is performed in the physical block.</p> |