发明名称 NON-VOLATILE MEMORY AND NON-VOLATILE MEMORY DATA REWRITING METHOD
摘要 <p>A non-volatile memory and a non-volatile memory data rewriting method capable of easily sensing an operation state at system down due to electric power failure or the like and reliably and rapidly returning to a normal storage state by a simple procedure. The non-volatile memory consists of storage units which are physical blocks, each having a data area (1) and a redundant area (2). The redundant area (2) includes a logical block address storage area (3) for storing an address of a corresponding logical block, a pre-use physical block address storage area (4) for storing an address of a physical block to be erased, and a status information storage area (6) for storing status information for discriminating the operation state of each stage generated when data rewriting is performed in the physical block.</p>
申请公布号 WO2003010671(P1) 申请公布日期 2003.02.06
申请号 JP2002007356 申请日期 2002.07.19
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