| 摘要 |
On a p-doped silicon substrate (1) an n-doped zone (3) forms the first part of resistance arrangement completed by second part (4). Their resistance value can be adjusted to a specific value by additional n-doping compared to the third n-doped region (2). Interconnections are formed by metal layers (7,8) and tracks (7a,9) terminations for connection to the evaluation circuit integrated with the shunt . Insulation barriers (5,6) isolate the zones from one another. Temperature compensation can be provided by the integration of a temperature sensor.
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