发明名称 |
METHOD FOR FORMING ULTRA-FINE MULTI-PATTERNS |
摘要 |
PURPOSE: A method for forming ultra-fine multi-patterns is provided to obtain the ultra-fine multi-patterns of a desired size in a narrow interval by performing a multiple patterning process using a sidewall. CONSTITUTION: A pattern layer, the second pattern layer, and the first pattern layer are sequentially deposited on a substrate. The first pattern is formed on the first pattern layer. The first sidewall layer is deposited on the first pattern. A sidewall is formed by performing a dry etch process. The second pattern is formed by etching the second pattern layer. The sidewall is removed from the second pattern. The second sidewall layer is deposited on the second pattern. The second sidewall(22') is formed by performing the dry etch process. A pattern(P) is formed by etching the pattern layer.
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申请公布号 |
KR20030009572(A) |
申请公布日期 |
2003.02.05 |
申请号 |
KR20010033065 |
申请日期 |
2001.06.13 |
申请人 |
PARK, BYUNG GOOK |
发明人 |
JUNG, GYEONG HUN;LEE, JONG DEOK;PARK, BYUNG GOOK;SUNG, SEOK GANG |
分类号 |
H01L21/027;(IPC1-7):H01L21/027 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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