| 摘要 |
PURPOSE: To provide a semiconductor memory in which power consumption at the time of refresh operation is reduced. CONSTITUTION: This device is provided with a row system control circuit 64 changing a delay time between a time at which a word line is activated and a time at which a sense amplifier is activated in normal read-out operation and refresh-operation. Even when a refresh-time is lengthened and electric charges of a memory cell are reduced, as sensitivity of the sense amplifier is improved, refresh-operation can be performed. Therefore, power consumption can be reduced by lengthening refresh-interval.
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