| 摘要 |
<p>A semiconductor device comprises a semiconductor substrate (13), an interlayer insulating layer (1) formed above the semiconductor substrate (13), a first metal interconnection (3) embedded in the interlayer insulating layer (1) with a surface thereof exposed to the same plane as a surface of the interlayer insulating layer (1), a diffusion preventive layer (4) formed on at least the first metal interconnection (3) to prevent diffusion of a metal included in the first metal interconnection (3), a nitrogen-doped silicon oxide layer (5) formed on the diffusion preventive layer (4), a fluorine-doped silicon oxide layer (6) formed on the nitrogen-doped silicon oxide layer (5), and a second metal interconnection (11) embedded in the fluorine-doped silicon oxide layer (6) with a surface thereof exposed to the same plane as a surface of the fluorine-doped silicon oxide layer (6), and electrically connected to the first metal interconnection (3). <IMAGE></p> |
