COPPER DEPOSITION METHOD INCLUDING DUAL PREPROCESSING PROCEDURE OF HYDROGEN PLASMA AND RAPID THERMAL PROCESS

摘要

PURPOSE: A copper deposition method including a dual processing procedure of hydrogen plasma and a rapid thermal process is provided to improve an electrical characteristic of a copper conductive layer by performing a dual preprocess of a plasma process and a rapid thermal process. CONSTITUTION: A diffusion barrier is sputtered on a-type Si wafer. A seed layers are continuously deposited on a surface of the sputtered diffusion barrier. A seed layer/diffusion barrier/SiO2/Si substrate is formed by depositing continuously a plurality of seed layers. The seed layer/diffusion barrier/SiO2/Si substrate is cleaned by performing a hydrogen plasma preprocess on the substrate including the seed layer. A rapid thermal process for the substrate including the cleaned seed layer is performed. An electroplating process of copper is performed on the substrate including the seed layer by using pulse current.