CMP SLURRY FOR POLISHING OXIDE LAYER OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A CMP(Chemical Mechanical Polishing) slurry for polishing an oxide layer of a semiconductor device is provided to minimize generation of large-sized particles by preventing a variation of a dispersive state in a polishing agent. CONSTITUTION: 30g 20%-KOH solution is added into a polyethylene container of 4 liter including 1682g deionized water. 8g 25%-TMAH is added into the polyethylene container. The mixed solution is stirred under the condition of 50 rpm during 10 minutes. The mixed solution is stirred under the condition of 500 rpm and 280g silica is added into the mixed solution. The first mixed slurry is formed by stirring the mixed solution. The first mixed slurry is dispersed by using high pressure. The dispersed slurry is filtered by using 1 micron filter. A polishing process for the filtered slurry is performed during 2 minutes.