发明名称 MEMORY MODULE
摘要 PURPOSE: To provide a memory module provided with a register, in which an endless dual T-branch topology is adopted and which is improved so that the device can cope with high frequency operation. CONSTITUTION: This module is provided with an impedance adjusting means connected in series to an output terminal of a transistor for output of a C/A register directly or indirectly. In the impedance adjusting means, adjustment of output impedance is performed so that output impedance in the case of watching from an input terminal of an internal C/A bus to the C/A register is made fixed substantially within an operation range of an internal signal outputted from the C/A register. Further, a rise time/fall time adjusting means is provided, and a goods waveform is obtained by adjusting tR/tF of the internal signal so that the internal signal has the prescribed tR/tF.
申请公布号 KR20030010528(A) 申请公布日期 2003.02.05
申请号 KR20020043809 申请日期 2002.07.25
申请人 ELPIDA MEMORY, INC. 发明人 NISIO YOJI;SHIBATA KAYOKO
分类号 H01L23/538;G06F1/10;G06F9/26;G06F12/00;G06F12/06;G06F13/16;G11C5/00;G11C5/02;G11C5/14;G11C7/00;G11C7/10;G11C8/00;G11C11/406;G11C11/407;H01L23/34;(IPC1-7):G11C5/02 主分类号 H01L23/538
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