TRENCH ISOLATION STRUCTURE AND METHOD FOR FORMING THE SAME

摘要

PURPOSE: A trench isolation structure and a method for forming the same are provided to obtain a stable isolation structure by densifying an SOG(Spin On Glass) layer. CONSTITUTION: A trench(100) is formed on a predetermined region of a semiconductor substrate(100) in order to define an active region. A liner is formed on an inner wall of the trench(100). A lower face of the trench(100) is exposed by performing an anisotropic etch process for the liner. A liner pattern(151) is formed by exposing the lower face of the trench(100). The trench(100) is filled with an insulating layer. The lower face of the trench(100) is oxidized by performing an annealing process for the semiconductor substrate(100). An insulating layer pattern(161) is formed by etching the insulating layer.