METHOD FOR FABRICATING FLASH MEMORY DEVICE USING SELF-ALIGNED NON-EXPOSURE PATTERN FORMATION PROCESS

摘要

PURPOSE: A method for fabricating a flash memory device using a self-aligned non-exposure pattern formation process is provided to form a hard mask for defining a control gate pattern on a cell region without an exposure process by using a lower stepped portion formed with a floating gate and an inter-gate dielectric. CONSTITUTION: A conductive layer, a blocking layer, and a photoresist layer are formed on a substrate including a floating gate pattern and an inter-gate dielectric pattern(100). A photoresist pattern is formed by developing the photoresist layer(110). A blocking layer pattern is formed by removing the exposed blocking layer(120). The photoresist pattern is removed(130). A hard mask is formed by oxidizing a surface of the exposed conductive layer(140,150). The blocking layer pattern is removed(160). A control gate is formed by etching the conductive layer. A stack gate is formed by removing the hard mask(170).