| 摘要 |
PURPOSE: To make a chip size small by reducing the layout area of a memory cell array of a semiconductor memory. CONSTITUTION: First transistor columns where transistors, by which any one of memory cell columns and an input/output circuit are selectively connected, are serially-connected are arranged. One of the transistors operates as a switch, and the other transistors, whose sources and drains are short-circuited, function as wiring. In the first transistor columns, a plurality of transistors are formed in advance. Because it is not necessary to selectively form only transistors to operate as a switch, it is not necessary to form a region for ion implant for forming the source/drain for each transistor. As a result, an arrangement space of transistors can be set without taking a layout rule of a diffusion layer region into account. Because the transistors are densely arranged, the layout area can be reduced and thus the chip size of the semiconductor memory can be made small.
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