| 发明名称 |
Sidewall treatment for low dielectric constant (low K) materials by ion implantation |
| 摘要 |
A method is provided, the method comprising forming a first conductive structure, and forming a first dielectric layer above the first conductive structure. The method also comprises densifying a portion of the first dielectric layer above at least a portion of the first conductive structure, and forming a first opening in the densified portion of the first dielectric layer.
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| 申请公布号 |
US6514844(B1) |
申请公布日期 |
2003.02.04 |
| 申请号 |
US20010840598 |
申请日期 |
2001.04.23 |
| 申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
MARTIN JEREMY I.;APELGREN ERIC M.;ZISTL CHRISTIAN;BESSER PAUL R.;DAKSHINA-MURTHY SRIKANTEWARA;SMITH JONATHAN B.;KEPLER NICK;CHEUNG FRED |
| 分类号 |
H01L21/3115;H01L21/768;(IPC1-7):H01L21/44;H01L21/476;H01L21/461;H01L21/469 |
主分类号 |
H01L21/3115 |
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