发明名称 |
Charged-particle beam exposure apparatus, exposure system, control method therefor, and device manufacturing method |
摘要 |
An element exposure field (EF) having a size falling within a range where aberration by an electron optical system is suppressed to a predetermined amount or less is divided into a plurality of partial fields (PF), and a pattern is drawn on a substrate with an electron beam on the basis of exposure information in which charged-particle beam dosages for the plurality of partial fields are set. Each partial field (PF) is continuously scanned and exposed with a corresponding dosage contained in the exposure information. Scan/exposure for each partial field (PF) is sequentially executed for all the partial fields (PF) in the element exposure field (EF).
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申请公布号 |
US6515409(B2) |
申请公布日期 |
2003.02.04 |
申请号 |
US20000733973 |
申请日期 |
2000.12.12 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
MURAKI MASATO;YUI YOSHIKIYO |
分类号 |
H01J37/147;G03F7/20;H01J37/302;H01J37/317;H01L21/027;(IPC1-7):H01J37/08 |
主分类号 |
H01J37/147 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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