发明名称 |
Method of manufacturing a semiconductor device having a low leakage current |
摘要 |
A field oxide film is provided in the surface of a semiconductor substrate. An interlayer insulating film is provided on the semiconductor substrate so as to cover an active layer. A contact hole exposing the surface of the active layer is provided in the interlayer insulating film. A conductor fills the contact hole so as to be electrically connected to the surface of the active layer. The end portion of the field oxide film has a surface perpendicular with respect to the surface of the semiconductor substrate. As a result, a dynamic random access memory can be obtained which is improved so that leakage current is reduced, which in turn increases a hold time of information.
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申请公布号 |
US6514834(B2) |
申请公布日期 |
2003.02.04 |
申请号 |
US19990373604 |
申请日期 |
1999.08.13 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
OOISHI TSUKASA |
分类号 |
H01L21/28;H01L21/8242;H01L27/108;(IPC1-7):H01L21/76;H01L21/823;H01L21/336;H01L23/58;H01L23/48 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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