发明名称 Damascene structure fabricated using a layer of silicon-based photoresist material
摘要 A damascene structure, and a method of fabricating same, containing relatively low dielectric constant materials (e.g., k less than 3.8). A silicon-based, photosensitive material, such as plasma polymerized methylsilane (PPMS), is used to form both single and dual damascene structures containing low k materials. During the manufacturing process that forms the damascene structures, the silicon-based photosensitive material is used as both a hard mask and/or an etch stop.
申请公布号 US6514857(B1) 申请公布日期 2003.02.04
申请号 US20010788164 申请日期 2001.02.16
申请人 APPLIED MATERIALS, INC. 发明人 NAIK MEHUL B.;WEIDMAN TIM;SUGIARTO DIAN;ZHAO ALLEN
分类号 H01L21/033;H01L21/311;H01L21/312;H01L21/768;(IPC1-7):H01L21/476 主分类号 H01L21/033
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