发明名称 |
High-quality silicon single crystal and method of producing the same |
摘要 |
A method of producing a high-quality silicon single crystal of a large diameter and a long size in a good yield by controlling the positions where ring-like oxygen-induced stacking faults (R-OSF) occur in the crystal faces and minimizing grown-in defects such a dislocation clusters and infrared scattering bodies that are introduced in the pulling step. Wafers produced from the above-high-quality silicon single crystal contain little harmful defects that would deteriorate device characteristics and can be effectively adapted to larger scale integration and size reduction of the devices. Therefore, the method can be extensively utilized in the field of producing semiconductor silicon single crystals.
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申请公布号 |
US6514335(B1) |
申请公布日期 |
2003.02.04 |
申请号 |
US20000486300 |
申请日期 |
2000.02.24 |
申请人 |
SUMITOMO METAL INDUSTRIES, LTD. |
发明人 |
EGASHIRA KAZUYUKI;OKUI MASAHIKO;NISHIMOTO MANABU;TANAKA TADAMI;KURAGAKI SHUNJI;KUBO TAKAYUKI;KIZAKI SHINGO;HORII JUNJI;ITO MAKOTO |
分类号 |
C30B15/00;(IPC1-7):C30B15/14 |
主分类号 |
C30B15/00 |
代理机构 |
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