| 摘要 |
786,281. Semi-conductor devices electrodepositing indium. PHILIPS ELECTRICAL INDUSTRIES, Ltd. Dec. 30, 1954 [Dec. 31, 1953], No. 37658/54. Classes 37 and 41. A method of making semi-conductor devices comprises applying electrode material to one end of a connecting conductor, placing said end on a semi-conductor body and then heating the whole assembly to fuse the electrode material to the conductor and to alloy it with the body. The material may be applied to the conductor by cataphoresis, evaporation or atomization, or by electrolysis, e.g. from a solution of In, KCN, KOH, and dextrose in water in the apparatus shown in Fig. 1 in which the conductors 4 are held in a clamp 5. Where an alloy electrode material, e.g. Pb-Sb alloy on a nickel wire, is required, the components thereof are electrolytically deposited separately and fused to form an alloy either before or during the process of alloying with the semi-conductor. It is desirable to use a connecting conductor non-wettable by the electrode material, e.g. tungsten, in which case it may be tipped with a readily wetted metal, e.g. gold or copper, before the electrode material is applied to it, to control flow of the material over the semi-conductor surface. The body and conductor may be held in a special templet and fused by heating the whole assembly, or two such tipped conductors which may be the same or different may be joined to form a single conductor which is bent to circular form so as to clamp the body between its ends. |
