发明名称 |
Method of horizontally growing carbon nanotubes and field effect transistor using the carbon nanotubes grown by the method |
摘要 |
Disclosed is a method of horizontally growing carbon nanotubes, in which the carbon nanotubes can be selectively grown in a horizontal direction at specific locations of a substrate having catalyst formed thereat, so that the method can be usefully utilized in fabricating nano-devices. The method includes the steps of: (a) forming a predetermined catalyst pattern on a first substrate; (b) forming a vertical growth preventing layer on the first substrate, which prevents carbon nanotubes from growing in a vertical direction; (c) forming apertures through the vertical growth preventing layer and the first substrate to expose the catalyst pattern through the apertures; and (d) synthesizing carbon nanotubes at exposed surfaces of the catalyst pattern in order to grow the carbon nanotubes in the horizontal direction.
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申请公布号 |
US6515339(B2) |
申请公布日期 |
2003.02.04 |
申请号 |
US20010907506 |
申请日期 |
2001.07.18 |
申请人 |
LG ELECTRONICS INC. |
发明人 |
SHIN JIN KOOG;KIM KYU TAE;JUNG MIN JAE;YOON SANG SOO;HAN YOUNG SOO;LEE JAE EUN |
分类号 |
B82B1/00;B01J23/74;B82B3/00;C01B31/02;C23C16/26;G11C13/02;H01L21/335;H01L27/22;H01L27/28;H01L29/06;H01L29/15;H01L29/16;H01L29/66;H01L29/76;H01L29/80;H01L31/119;H01L43/08;H01L51/00;H01L51/05;H01L51/30;H01L51/40;(IPC1-7):H01L29/76;H01L29/94;H01L31/062;H01L31/032 |
主分类号 |
B82B1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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