Method of manufacturing a semiconductor device

摘要

Lower metal wiring is formed on a base insulating film. A BCB film which is formed of a BCB (benzocyclobutene) resin is formed on the base insulating film and metal wiring. A SiO2 film is formed on the BCB film. A resist film is formed on the SiO2 film, and patterned using a lithography technique. The SiO2 film is etched using the resist film as a mask. The BCB film is anisotropically etched with a mixture of Cl2/BCl3/O2 using the SiO2 film as a mask, thereby to form a contact hole. The contact hole is filled with a conductor, thereby forming upper metal wiring.