发明名称 |
Shared sense amplifier driver technique for dynamic random access memories exhibiting improved write recovery time |
摘要 |
A shared sense amplifier driver technique for integrated circuit devices including an array of memory cells comprises a plurality of sense amplifiers couplable to the memory cells with each of the sense amplifiers having an associated pull-up and pull-down switching device respectively coupled to a first and second latch node thereof. A first subset of the plurality of sense amplifiers have their first latch node (e.g. latch P-channel "LP") electrically coupled and a second differing number subset of the plurality of sense amplifiers have their second latch node (e.g. latch N-channel "LN") electrically coupled. By sharing the selected LP and LN nodes with more than one sense amplifier in a column, "write" recovery time can be significantly improved over that of conventional layouts and designs.
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申请公布号 |
US6515926(B1) |
申请公布日期 |
2003.02.04 |
申请号 |
US20020038932 |
申请日期 |
2002.01.04 |
申请人 |
UNITED MEMORIES, INC.;SONY CORPORATION |
发明人 |
PARRIS MICHAEL C.;HARDEE KIM C. |
分类号 |
H01L21/8242;G11C7/06;G11C7/18;G11C11/409;H01L27/108;(IPC1-7):G11C7/00 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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