| 摘要 |
A non-volatile memory circuit has FLOTOX type memory elements operable with a low data writing voltage even when a difference between threshold voltages of non-volatile memory elements is small. Each data bit is held by two non-volatile memory elements for storing data having a complementary logic relationship. Potentials at data lines are supplied to inputs of a sense amplifier so that even a small potential difference can be detected. As a result, data stored in a pair of non-volatile FLOTOX type memory elements having shallow data writing depths can be read.
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