Method of creating narrow trench lines using hard mask

摘要

An exemplary method is described which forms narrow trench lines having a critical dimension which is smaller than the critical dimension possible using conventional lithographic techniques. This method can include providing a hard mask over a layer of material in which a trench line is to be formed; etching the hard mask with a first critical dimension at the top of the hard mask and a second critical dimension at the bottom of the hard mask; and etching a trench line using the hard mask to transfer the second critical dimension to the trench line.