| 摘要 |
In a semiconductor laser device: a lower cladding layer; a lower optical waveguide layer; a compressive strain quantum well active layer made of Inx3Ga1-x3As1-y3Py3, where 0<x3<=0.4, 0<=y3<=0.1; an upper optical waveguide layer; a first upper cladding layer made of Inx8Ga1-x8P of a second conductive type, and formed on the upper optical waveguide layer; an etching stop layer made of Inx1Ga1-x1As1-y1Py1 of the second conductive type, where 0<=x1<=0.3, 0<=y1<=0.3; a current confinement layer made of Inx8Ga1-x8P of the first conductive type, where x8=0.49±0.01; a second upper cladding layer made of Alz4Ga1-z4As of the second conductive type, where 0.20<=z4<=0.50; and a contact layer of the second conductive type are formed on a GaAs substrate of a first conductive type in this order. In the semiconductor laser device, the absolute value of the product of the strain and the thickness of the compressive strain quantum well active layer is equal to or smaller than 0.25 nm; the absolute value of a second product of the strain and the thickness of the etching stop layer is equal to or smaller than 0.25 nm; and each of the lower cladding layer, the lower optical waveguide layer, the upper optical waveguide layer, the first upper cladding layer, the current confinement layer, the second upper cladding layer, and the contact layer has such a composition as to lattice-match with the GaAs substrate.
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