| 摘要 |
A nitride read only memory (NROM) cell. In the NROM cell, a composite gate dielectric is formed on a substrate, a conformal oxide layer is formed on the surface of the composite gate dielectric, two bit line oxides in the substrate are located on two sides of the composite gate dielectric, two source/drains are respectively located under the two bit line oxides, and a gate is formed over the composite gate dielectric and the two bit line oxides. The composite gate dielectric further has a bottom oxide layer, a nitride layer and a top oxide layer, and the conformal oxide layer is deposited by chemical vapor deposition.
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