发明名称 Method of reducing interlayer dielectric thickness variation feeding into a planarization process
摘要 A method is provided that comprises forming a first dielectric layer on a workpiece, measuring a thickness of the first dielectric layer, and forming a second dielectric layer above the first dielectric layer, the second dielectric layer being formed to a thickness that is determined based upon the measured thickness of the first dielectric layer.
申请公布号 US6514865(B1) 申请公布日期 2003.02.04
申请号 US20020044532 申请日期 2002.01.11
申请人 ADVANCED MICRO DEVICES, INC. 发明人 EVANS ALLEN L.
分类号 H01L21/66;(IPC1-7):H01L21/302 主分类号 H01L21/66
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