发明名称 |
Method of reducing interlayer dielectric thickness variation feeding into a planarization process |
摘要 |
A method is provided that comprises forming a first dielectric layer on a workpiece, measuring a thickness of the first dielectric layer, and forming a second dielectric layer above the first dielectric layer, the second dielectric layer being formed to a thickness that is determined based upon the measured thickness of the first dielectric layer.
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申请公布号 |
US6514865(B1) |
申请公布日期 |
2003.02.04 |
申请号 |
US20020044532 |
申请日期 |
2002.01.11 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
EVANS ALLEN L. |
分类号 |
H01L21/66;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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