发明名称 VERTICAL FURNACE
摘要 PROBLEM TO BE SOLVED: To provide a vertical furnace capable of improving a production efficiency of a semiconductor device, such as a logic type or the like to be manufactured by constituting a lot of a small number of semiconductor wafers. SOLUTION: The vertical furnace comprises a vertical type reaction furnace 16 for conducting a predetermined treatment for the semiconductor wafer 13, a boat 12 housed fixedly in the furnace 16 to hold the plurality of semiconductor wafers 13 at an interval from each other in a plate thickness direction, a cover 10 disposed at a lower part of the furnace 16 to open/close the furnace 16, and semiconductor wafer-conveying means (24, 26a, 26) for conveying the wafers 13 to the boat 12 or delivering the wafers from the boat, corresponding to opening/closing of the cover 10 in a state, in which the boat 2 is fixed to the furnace 16.
申请公布号 JP2003031563(A) 申请公布日期 2003.01.31
申请号 JP20010216579 申请日期 2001.07.17
申请人 FUJITSU LTD 发明人 ENOSHIMA TOSHIHIRO
分类号 B65G49/07;C23C16/44;H01L21/205;H01L21/22;H01L21/31;H01L21/677;H01L21/68;(IPC1-7):H01L21/31 主分类号 B65G49/07
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