| 发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
| 摘要 |
PROBLEM TO BE SOLVED: To improve electrical characteristics of a field effect transistor. SOLUTION: The method for manufacturing a semiconductor device comprises the steps of forming a gate insulating film 3 and a gate electrode 4a on a semiconductor substrate 1S, and then implanting an impurity to form a channel region 6 of the field effect transistor.
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| 申请公布号 |
JP2003031680(A) |
申请公布日期 |
2003.01.31 |
| 申请号 |
JP20010214811 |
申请日期 |
2001.07.16 |
| 申请人 |
HITACHI LTD |
发明人 |
SAKAI KENJI;SHIBA KAZUYOSHI;KANBARA SHIRO;NAKAJIMA NOBUE;KURODA KENICHI |
| 分类号 |
H01L21/8247;H01L21/336;H01L21/8238;H01L27/092;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L21/823;H01L21/824 |
主分类号 |
H01L21/8247 |
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