发明名称 CAPACITOR MICROPHONE AND PRESSURE SENSOR
摘要 PROBLEM TO BE SOLVED: To provide a capacitor microphone and pressure sensor, which can incease the degree of freedom in the structure of a parallel plate electrode, designing of a mountable circuit by eliminating the restriction in a producing process. SOLUTION: The capacitor microphone and pressure sensor 100 is formed by etching a bonded substrate 400 having an etch stop layer 220 on one surface of a vibration film substrate 210, and obtained by inserting a bonding film 320 to be used for bonding the vibration film substrate 210 and a rear surface plate substrate 310 between the etch stop layer 220 and the rear surface plate substrate 310 to bond them. The bonding film 320 contains the same impurity as the boron doped for forming the etch stop layer 220, the density of the impurity contained in the bonding film 320 equal to or higher than that of the impurity doped in the etch stop layer 220, impurity diffusion for forming the etch stop layer 220 is performed at <=1200 deg.C, and heat processing after this is performed at >=900 deg.C and equal to or lower than the temperature of the impurity diffusion.
申请公布号 JP2003031820(A) 申请公布日期 2003.01.31
申请号 JP20010219465 申请日期 2001.07.19
申请人 NIPPON HOSO KYOKAI <NHK> 发明人 TAJIMA TOSHIFUMI;NISHIGUCHI TOSHIYUKI;SAITO NOBUO
分类号 G01L9/12;B81C1/00;B81C3/00;H01L29/84;H04R19/04;(IPC1-7):H01L29/84 主分类号 G01L9/12
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