| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for removing impurities within a growth pipe of a semiconductor growth apparatus, capable of removing the impurities within the growth pipe, in a short time. SOLUTION: After the growth pipe of the semiconductor growth apparatus is temporarily opened to the atmosphere, a group III raw material and a group V raw material are introduced into the growth pipe without setting a substrate, and the temperature in the growth pipe is changed and simultaneously pseudo- growth is carried out to achieve epitaxial growth for a predetermined time, so that a thermal stress is applied to the inner wall of the growth pipe to promote the detachment of the impurities deposited on the inner wall, and thus removal of the impurities in the growth pipe can be carried out in a short time.
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